Magnesium doping profile control in p-GaN layers grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Magnesium doping profile control in p-GaN layers grown by metalorganic chemical vapor deposition

Published:2023-01 Issue: Volume:602 Page:126962
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bakhtiary-Noodeh Marzieh,Detchprohm Theeradetch,Dupuis Russell D.

Funder

National Science Foundation

U.S. Department of Energy

National Aeronautics and Space Administration

Army Research Office

NSF

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field;Shao;IEEE J. Sel. Top. Quantum Electron.,2014

2. E.F. Schubert, J.K. Kim, Solid-State Light Sources Getting Smart, Science (80-.)., vol. 308, no. 5726, pp. 1274–1278, May 2005, doi: 10.1126/science.1108712.

3. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors;Joh;IEEE Electron Device Lett.,2008

4. H.M. Manasevit, F.M. Erdman, W.I. Simpson, The use of metalorganics the the preparation of semiconductor materials, IV: the nitrides of aluminum and gallium, J. Electrochem. Soc. 118(11), pp. 1864-1868, doi: 10.1149/1.2407853.

5. The growth of Mg-doped GaAs by the OM-VPE Process;Lewis;J. Electron. Mat,1983

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