Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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1. Wideband near-infrared LED with over 1 mW power by stacked InAs quantum dots/GaAs;physica status solidi (c);2012-10-10
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