Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases-Reference-Cited by-同舟云学术

Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases

Published:2011-01 Issue:1 Volume:315 Page:278-282
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lochner Zachary,Jin Kim Hee,Choi Suk,Lee Yi-Che,Zhang Yun,Shen Shyh-Chiang,Ryou Jae-Hyun,Dupuis Russell D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

2. Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits

3. H. Xing, D.S. Green, L. McCarthy, I.P. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, U.K. Mishra, Bipolar/BiCMOS Circuits and Technical Meeting, 2001,p.125.

4. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

5. AlGaN/GaN heterojunction bipolar transistor

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor;IEEE Electron Device Letters;2020-01

2. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact;IEEE Transactions on Electron Devices;2019-03

3. Rectifying behavior in the GaN/graded-AlxGa1−xN/GaN double heterojunction structure;Journal of Physics D: Applied Physics;2018-04-30

4. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2);physica status solidi (a);2012-02-15

5. NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate;Applied Physics Letters;2011-11-07