Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system-Reference-Cited by-同舟云学术

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Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system

Published:2011-03 Issue:1 Volume:318 Page:397-400
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lorenzzi Jean,Ferro Gabriel,Cauwet François,Souliere Véronique,Carole Davy

Funder

Marie-Curie Research and Training Network

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate

2. Microstructural characterization of very thick freestanding 3C-SiC wafers

3. Control of 3C-SiC/Si wafer bending by the “checker-board” carbonization method

4. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

5. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates;Materials Science Forum;2019-07

2. Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate;Materials Science Forum;2014-02

3. Microstructure investigation of SiC films synthesized from liquid phase in Sm–Co melts;Superlattices and Microstructures;2011-12

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