CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisation-Reference-Cited by-同舟云学术

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CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisation

Published:2011-05 Issue:1 Volume:323 Page:236-240
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davidson I.A.,Moug R.T.,Dalgarno P.A.,Bradford C.,Warburton R.J.,Prior K.A.

Funder

EPSRC

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer

2. Exciton–photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

3. Determination of the band-gap of MgS and MgS-rich Zn1−xMgxSySe1−y alloys from optical transmission measurements

4. Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

5. Development of an epitaxial lift-off technology for II–VI nanostructures using ZnMgSSe alloys

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