Ca3N2 as a flux for crystallization of GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials;Grzegory,2005
2. Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction
3. Assessment of Li–Ga–N ternary system and GaN single crystal growth
4. Growth of GaN single crystals by Ca3N2 flux
5. Der Schmelzpunkt des Calcium und das System Calcium-Calciumnitrid
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, electronic, and optical properties of three types Ca3N2 from first-principles study;Journal of Molecular Modeling;2023-12-13
2. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12
3. Novel Solution Growth Method of Bulk AlN Using Al and Li$_{3}$N Solid Sources;Applied Physics Express;2011-08-19
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