GaP:Mg layers grown on GaN by MOCVD-Reference-Cited by-同舟云学术

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GaP:Mg layers grown on GaN by MOCVD

Published:2010-10 Issue:21 Volume:312 Page:3101-3104
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Shuti,Su Jun,Fan Guanghan,Liu Chao,Cao Jianxing,Yin Yian

Funder

National Nature Science Foundation of China

Nature Science Foundation of Guangdong province

Science and Technology Program of Guangdong province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. GaN Growth Using GaN Buffer Layer

3. Stability of binary logic tunneling phase states in dc‐biased and ac‐pumped single‐electron tunnel junctions

4. Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices

5. The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

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