Author:
Vincent B.,Loo R.,Vandervorst W.,Brammertz G.,Caymax M.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. J. Mitard, K. Martens, B. DeJaeger, J. Franco, C. Shea, C. Plourde, F. Leys, R. Loo, G. Hellings, G. Eneman, Wei-E Wang; J.C. Lin, B. Kaczer, K. DeMeyer, T. Hoffmann, S. DeGendt, M. Caymax, M. Meuris, M.M. Heyns, in: Proceedings of the European Solid State Device Research Conference, 2009, pp. 411–414.
2. Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs
3. Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices
4. Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
5. SiGe SEG Growth for Buried Channels p-MOS Devices
Cited by
36 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献