Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods-Reference-Cited by-同舟云学术

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Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods

Published:2011-05 Issue:1 Volume:323 Page:323-325
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tambo H.,Hasegawa S.,Kameoka H.,Zhou Y.K.,Emura S.,Asahi H.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Room temperature ferromagnetic properties of (Ga, Mn)N

2. High temperature (>400K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

3. Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

4. Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

5. Low-temperature ferromagnetism in (Ga, Mn)N: Ab initiocalculations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gadolinium-doped III-nitride diluted magnetic semiconductors for spintronics applications;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016

2. Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy;Journal of Crystal Growth;2013-11

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