Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
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3. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates;Japanese Journal of Applied Physics;2017-07-21
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