Buffer influence on AlSb/InAs/AlSb quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability
2. High radiation tolerance of InAs∕AlSb high-electron-mobility transistors
3. An AlSb–InAs–AlSb double-heterojunction P-n-P bipolar transistor
4. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
5. Intrinsic current bistability in InAs/AlxGa1−xSb resonant tunneling devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates;Journal of Semiconductors;2022-07-01
2. Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy;Materials Letters;2011-02
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