Flat-band potentials of GaN and InGaN/GaN QWs by bias-dependent photoluminescence in electrolyte solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Band-Edge Potentials of n-Type and p-Type GaN
2. Hydrogen Evolution from p-GaN Cathode in Water under UV Light Irradiation
3. Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface
4. Electrochemistry and Photoetching of n-GaN
5. Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
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1. InGaN as a Substrate for AC Photoelectrochemical Imaging;Sensors;2019-10-11
2. An artificial photosynthesis anode electrode composed of a nanoparticulate photocatalyst film in a visible light responsive GaN-ZnO solid solution system;Scientific Reports;2016-10-19
3. Electrochemical deposition of copper on single-crystal gallium nitride(0001) electrode: nucleation and growth mechanism;Electrochimica Acta;2014-06
4. Comparison of Forward and Reverse Reactions in Hydrogen Generation between GaN, InGaN, Nanocrystalline TiO2and Pt Electrodes during Water Electrolysis;Japanese Journal of Applied Physics;2008-12-19
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