Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. BGaInAs alloys lattice matched to GaAs
2. Molecular beam epitaxial growth of BGaAs ternary compounds
3. Optimized growth of BGaAs by molecular beam epitaxy
4. MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs
5. Growth and characterization of high quality BxGa1−xAs/GaAs(001) epilayers
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1. Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP;Journal of Physics D: Applied Physics;2021-10-07
2. Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms;Optical Materials Express;2020-10-22
3. Bowing of the band gap and spin-orbit splitting energy in BGaAs;Materials Research Express;2020-01-06
4. Boron-doped III–V semiconductors for Si-based optoelectronic devices;Journal of Semiconductors;2020-01-01
5. First-principles computations of $$\hbox {Y}_{x}\hbox {Ga}_{1-{x}}$$As-ternary alloys: a study on structural, electronic, optical and elastic properties;Bulletin of Materials Science;2019-12-18
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