Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Quantum entanglement formation by repeated spin blockade measurements in a spin field-effect transistor structure embedded with quantum dots
2. Real-time detection of electron tunnelling in a quantum dot
3. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
4. Semiconductor quantum dots for electron spin qubits
5. Band lineups and deformation potentials in the model-solid theory
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A controlled-NOT gate in a chain of qubits embedded in a spin field-effect transistor and its process tomography;The European Physical Journal B;2013-09
2. Electron Mediated Mn-Mn Interaction in Quantum Dots;Acta Physica Polonica A;2012-05
3. Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2011-12
4. Electric Field Control of Magnetic Coupling in a Double Quantum Dot System and Related Parasitic Electric Dipole Effect;Acta Physica Polonica A;2010-11
5. Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots;Japanese Journal of Applied Physics;2010-10-20
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