Numerical studies concerning the dependence of the impurity distribution on the pulling rate and on the radius of the capillary channel in the case of a thin rod grown from the melt by edge-defined film-fed growth (EFG) method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Growth of controlled profile crystals from the melt: Part I - Sapphire filaments
2. Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)
3. Edge-defined, film-fed crystal growth
4. Impurity redistribution in EFG
5. Aluminum redistribution in EFG of silicon ribbon
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An analysis of segregation during horizontal ribbon growth of silicon;Journal of Crystal Growth;2014-03
2. Model based computation of the impurity distribution in the wall of a tube grown from the melt by the edge-defined film-fed growth technique;AIP Conference Proceedings;2014
3. Model based computation of the impurity distribution in a sheet grown from the melt by the edge-defined film-fed growth technique;AIP Conference Proceedings;2013
4. Mass and Heat Transport in BS and EFG Systems;Springer Handbook of Crystal Growth;2010
5. Mass Transfer Analysis in the Case of the EFG Method;Lecture Notes in Electrical Engineering;2009
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