Morphological and electrical properties of InP grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Morphological and electrical properties of InP grown by solid source molecular beam epitaxy

Published:2007-02 Issue:2 Volume:299 Page:243-247
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pi Biao,Shu Yongchun,Lin Yaowang,Sun Jiaming,Qu Shengchun,Yao Jianghong,Xing Xiaodong,Xu Bo,Shu Qiang,Wang Zhanguo,Xu Jingjun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. High-mobility InGaAs∕InAlAs pseudomorphic heterostructures on InP (001)

2. Solid-source MBE for growth of laser diode materials

3. 10 Gbit s−1electroabsorption modulator integrated with a DBR laser using the selective area growth technique

4. 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

5. Comparison of strain-compensated quantum cascade lasers grown with GaInAs and InP waveguides

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering;Journal of Crystal Growth;2012-09

2. The influence of argon pressure and RF power on the growth of InP thin films;Semiconductor Science and Technology;2011-04-15

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