High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers-Reference-Cited by-同舟云学术

High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Published:2007-04 Issue: Volume:301-302 Page:1005-1008
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Bing-Ruey,Snodgrass William,Feng Milton,Cheng K.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz

2. Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz

3. B.-R. Wu, W. Snodgrass, W. Hafez, M. Feng, K.Y. Cheng, Proceedings of the International Conference on Indium Phosphide and Related Materials Conference, Princeton, NJ, May 8–12, 2006, pp. 89–92.

4. J.C. Zolper, Proceedings of the International Conference on Indium Phosphide and Related Materials Conference, San Diego, CA, May 12–16, 2003, p. 8.

5. Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers

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