Heteroepitaxial growth of GaN on atomically flat LiTaO3 (0001) using low-temperature AIN buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition
4. Growth of epitaxial AlN films on (Mn,Zn)Fe2O4 substrates by pulsed laser deposition
5. G-GIXD characterization of GaN grown by laser MBE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN on sapphire substrates for visible light-emitting diodes;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018
2. Gallium nitride (GaN) on sapphire substrates for visible LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2014
3. Polarization-dependent methanol adsorption on lithium niobate Z-cut surfaces;Physical Review B;2012-09-06
4. GaN/LiNbO3 (0001) interface formation calculated from first-principles;Applied Surface Science;2010-07
5. Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition;Journal of Crystal Growth;2008-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3