A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200°C)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
2. Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LMOVPE) of Indium Nitride (InN)
3. Growth and Characterization of Epitaxial InN Films on Sapphire Substrate using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)
4. Photoinduced deposition of thin films
5. ArF laser photodissociation of NH3 at 193 nm: internal energy distributions in NH2 X̃2B1 and Ã2A1, and two-photon generatin of NH A 3Π and b 1Σ+
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