Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Observation of a new ordered phase inAlxIn1−xAs alloy and relation between ordering structure and surface reconstruction during molecular-beam-epitaxial growth
2. Observation of a New CuPt-Type Ordered-Phase with Orientation in the [111]A Direction in $\bf Al_{0.5}In_{0.5}P$ Alloy
3. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
4. Ordering in GaAs1−xSbxgrown by molecular beam epitaxy
5. Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySbylayers: Possible relationship to surface reconstruction occurring during layer growth
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomistic modeling of bond lengths in random and ordered III-V alloys;Journal of Applied Physics;2013-09-28
2. Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques;Nanotechnology;2012-02-10
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