Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. See the special issues: III–N–V semiconductor alloys, Semicond. Sci. Technol. 17 (2002) 1, Dilute nitrides, J. Phys. Condens. Matter 16 (2004) 1.
2. Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
3. Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy
4. Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates
5. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy
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1. Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study;Journal of Materials Science: Materials in Electronics;2007-11-15
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