Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Suppression of Ostwald ripening inIn0.5Ga0.5Asquantum dots on a vicinal (100) substrate
2. Structural and chemical investigation ofIn0.6Ga0.4AsStranski-Krastanow layers buried in GaAs by transmission electron microscopy
3. Self organization phenomena of quantum dots grown by metalorganic chemical vapour deposition
4. Growth interruption to tune the emission of InAs quantum dots embedded in InGaAs matrix in the long wavelength region
5. Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy
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1. 7.3.6 Quantum dots and nano crystals based on ZnSe and its alloys;Growth and Structuring;2013
2. A study of sulfur/selenium substitution effects on physical and mechanical properties of vacuum-grown ZnS1−xSex compounds using Boubaker polynomials expansion scheme (BPES);Journal of Alloys and Compounds;2009-06
3. Microwave-assisted synthesis and highly photocatalytic activity of MWCNT/ZnSe heterostructures;Materials Chemistry and Physics;2009-02
4. Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates;Applied Physics Letters;2007-10
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