Epitaxial growth of II–VI semiconductor CdTe on a layered material NbSe2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
2. Ultrasharp interfaces grown with Van der Waals epitaxy
3. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
4. Growth and characterization of GaSe and GaAs/GaSe on As‐passivated Si(111) substrates
5. Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?
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1. CdTe Photovoltaics in Superstrate Geometry–Back-Contact Materials: A Review;ACS Applied Energy Materials;2023-08-28
2. 2D reciprocal space map of etched metalorganic chemical vapor deposited CdTe(001) film surface on miscut GaAs(001);Thin Solid Films;2023-05
3. Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials;Progress in Quantum Electronics;2021-03
4. Back contacts materials used in thin film CdTe solar cells—A review;Energy Science & Engineering;2021-02-10
5. Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation;Physical Review Materials;2017-11-14
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