Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
2. GaN on Si Substrate with AlGaN/AlN Intermediate Layer
3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
4. Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer
5. Ultraviolet and violet GaN light emitting diodes on silicon
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanism of SiC formation by Si surface carbonization using CO gas;Applied Surface Science;2024-07
2. Evidence of C migration in the SiO2 to the SiO2/Si interface of C-implanted structures;Thin Solid Films;2021-07
3. Ion beam synthesis of SiC on Si toward the radiation damage free limit;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04
4. Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si;Semiconductor physics, quantum electronics and optoelectronics;2015-03-25
5. Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer's;World Journal of Engineering;2013-10-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3