Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates-Reference-Cited by-同舟云学术

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Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates

Published:2004-01 Issue:2-3 Volume:261 Page:324-329
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Marco de Lucas M.C.,Fabreguette F.,Linsavanh M.,Imhoff L.,Heintz O.,Josse-Courty C.,Mesnier M.T.,Potin V.,Bourgeois S.,Sacilotti M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

3. Epitaxial Lateral Overgrowth of GaN

4. GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE

5. Low temperature growth interface for growing Boron Monophosphide on Si substrates

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1. ZnGa2O4 and ZnGa2O4:N thin films applied as sensors for detection of acetaldehyde in ethanol;Physica B: Condensed Matter;2023-06

2. Crystallization of gallium oxynitride thin films;Journal of Solid State Chemistry;2020-02

3. Evolution of the composition of nanoparticles formed by the nanosecond Nd:YAG laser irradiation of an aluminium target in N2–O2 gas mixtures;Applied Physics A;2017-10-17

4. Optical properties of GaN:Tb nanoparticles synthesized by simple ammonification method;Acta Physica Sinica;2013

5. Structural and Field Emission Properties of GaN–SWCNT Nanocomposites;Journal of The Electrochemical Society;2010

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