Computational fluid dynamics modeling of a new high-pressure chemical vapor deposition reactor design-Reference-Cited by-同舟云学术

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Computational fluid dynamics modeling of a new high-pressure chemical vapor deposition reactor design

Published:2021-07 Issue: Volume:566-567 Page:126155
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yousefian Pedram,Pimputkar Siddha

Funder

Lehigh University P C Rossin College of Engineering and Applied Science

National Science Foundation Division of Materials Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference51 articles.

1. GaN Technology for Power Electronic Applications: A Review;Flack;J. Electron. Mater.,2016

2. 1080 nm InGaAs laser power converters grown by MOCVD using InAlGaAs metamorphic buffer layers;Kim;Sol. Energy Mater. Sol. Cells.,2019

3. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures;MacChesney;Mater. Res. Bull.,1970

4. Elucidation of factors obstructing quality improvement of MOVPE-grown InN;Yamamoto;J. Cryst. Growth.,2009

5. Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells;Lymperakis;Phys. Rev. Mater.,2018

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1. Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures;Crystals;2024-04-18

2. Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability;Crystals;2024-01-23

3. Effect of the Injection Structure on Gas Velocity Distribution in a 3D Vertical Oven;Coatings;2023-09-28

4. Chemical reaction-mass transport model of Ga2O3 grown by TEGa in MOCVD and an intelligent system;Journal of Crystal Growth;2023-09

5. Improvement of SiC deposition uniformity in CVD reactor by showerhead with baffle;Journal of Crystal Growth;2023-08

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