Effects of substrate temperature on the uniformity of InGaAs epilayers using a dual-zone manipulator-Reference-Cited by-同舟云学术

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Effects of substrate temperature on the uniformity of InGaAs epilayers using a dual-zone manipulator

Published:2021-11 Issue: Volume:574 Page:126330
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Hongzhen,Zhu Shalu,Fan Liuyan,Gu Yi^ORCID,Chen Pingping,Wang Shumin,Cao Jiasheng,Yang Bo,Li Tao,Shao Xiumei,Li Xue,Gong Haimei

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Science and Technology Commission of Shanghai Municipality

International Science and Technology Cooperation Program of Shanxi Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays;Yu;ACS Appl. Electron. Mater.,2020

2. Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector;Ren;Opt. Express,2011

3. InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding;Park;Opt. Mater. Express,2018

4. The limit of quantum cascade detectors: A single period device;Schwarz;Appl. Phys. Lett.,2017

5. Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor;Ahish;Superlattice. Microst.,2017

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