GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)-Reference-Cited by-同舟云学术

GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)

Published:2020-02 Issue: Volume:531 Page:125303
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Meyer Kevin^ORCID,Barnstedt Juergen,Conti Lauro,Hanke Lars,Kalkuhl Christoph,Kappelmann Norbert,Rauch Thomas,Stelzer Beate,Werner Klaus,Schaadt Daniel M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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3. M.P. Ulmer, B.W. Wessels, O.H.W. Siegmund, Advances in wide-bandgap-semiconductor-based photocathode devices for low-light-level applications, 2003.

4. Fundamental energy gap of gan from photoluminescence excitation spectra;Monemar;Phys. Rev. B,1974

5. Gan-based solar-ultraviolet detection instrument;Monroy;Appl. Opt.,1998

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