In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling-Reference-Cited by-同舟云学术

In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling

Published:2020-02 Issue: Volume:532 Page:125428
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lau Victor,Maeda Kensaku,Fujiwara Kozo,Lan Chung-wen^ORCID

Funder

Ministry of Science and Technology

Institute for Materials Research (IMR) of Tohoku University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Defect and grain boundary engineering for enhanced performances and lifetimes of hybrid perovskite solar cells;De Marco,2019

2. Effects of bulk and grain boundary recombination on the efficiency of columnar-grained crystalline silicon film solar cells;Deceglie,2010

3. Stability of a planar interface during solidification of a dilute binary alloy;Mullins;J. Appl. Phys.,1964

4. Faceted interfaces in directional solidification;Norris;J. Cryst. Growth,2008

5. In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts;Fujiwara;Acta Mater.,2008

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3. In situ visualization of silicon wafer casting on silicon carbide as low nucleation undercooling substrate;Journal of Crystal Growth;2021-07

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