Surface reverse etching analysis of (Al)GaN-capped AlGaNGaN high electron mobility transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
2. 2009 IEEE International Reliability Physics Symposium Montreal, Canada;Ohki,2009
3. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
4. Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
5. Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method
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