Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process-Reference-Cited by-同舟云学术

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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process

Published:2019-07 Issue: Volume:517 Page:59-63
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Horiuchi Takashi,Wang Lei,Sekimoto Atsushi^ORCID,Okano Yasunori,Ujihara Toru,Dost Sadik^ORCID

Funder

Academic Center for Computing and Media Studies, Kyoto University

Ministry of Education, 165 Culture, Sports, Science and Technology of Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

2. Optimal shape design as a material distribution problem

3. A continuous adjoint formulation for the computation of topological and surface sensitivities of ducted flows

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1. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024

2. Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth;Materials;2023-01-12

3. A review of the simulation studies on the bulk growth of silicon carbide single crystals;Journal of the Korean Ceramic Society;2022-02-18

4. Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal;Journal of Thermal Science and Technology;2021

5. Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation;Journal of Crystal Growth;2020-02

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