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Phosphorus diffusion gettering of substitutional metal contaminants at a small-angle grain boundary in n-type silicon: The case of gold

  • Published:2013-10 Issue: Volume:380 Page:51-54
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Jiang Tingting,Yu Xuegong,Fan Ruixin,Gu Xin,Yang Deren

Funder

National Key Technology R&D Program

Innovation Team Project of Zhejiang Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Transition metals in silicon;Weber;Applied Physics A: Materials Science and Processing,1983

2. Transition-metal profiles in a multicrystalline silicon ingot;Macdonald;Journal of Applied Physics,2005

3. Chemical natures and distributions of metal impurities in multicrystalline silicon materials;Buonassisi;Progress in Photovoltaics,2006

4. Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon;McHugo;Applied Physics Letters,1998

5. Electrical properties and recombination activity of copper, nickel and cobalt in silicon;Istratov;Applied Physics A: Materials Science and Processing,1998

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