Effect of crucible shape on heat transport and melt–crystal interface during the Kyropoulos sapphire crystal growth-Reference-Cited by-同舟云学术

Effect of crucible shape on heat transport and melt–crystal interface during the Kyropoulos sapphire crystal growth

Published:2014-02 Issue: Volume:388 Page:29-34
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen C.,Chen H.J.,Yan W.B.,Min C.H.,Yu H.Q.,Wang Y.M.,Cheng P.,Liu C.C.

Funder

Hebei Province Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

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3. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates;Kuznia;J. Appl. Phys.,1993

4. Numerical analysis of sapphire crystal growth by the Kyropoulos technique;Demina;Opt. Mater.,2007

5. Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method;Demina;J. Cryst. Growth,2008

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1. Effects of different crucible shapes on heat and oxygen transport during continuous Czochralski silicon crystal growth;Journal of Crystal Growth;2024-01

2. 3D Anisotropic Stress Analysis during Kyropoulos Growth of Sapphire Single Crystal;Crystal Research and Technology;2019-07-22

3. Numerical study on the effect of additional resistive heating and crystal rotation on sapphire single crystals (Al2O3) grown by the Kyropoulos method;CrystEngComm;2018

4. Interface effect on titanium distribution during Ti-doped sapphire crystals grown by the Kyropoulos method;Optical Materials;2017-07

5. Numerical investigation of an experimental Kyropoulos process to grow silicon ingots for photovoltaic application;Journal of Crystal Growth;2017-02