Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars-Reference-Cited by-同舟云学术

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Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars

Published:2014-01 Issue: Volume:386 Page:175-178
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kang Junjie,Li Zhi,Liu Zhiqiang,Li Hongjian,Zhao Yongbing,Tian Yingdong,Ma Ping,Yi Xiaoyan,Wang Guohong

Funder

National High Technology Program of China

National Natural Science Foundation of China

Beijing Municipal Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Reactive ion etching of novel materials—GaN and SiC

2. Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96Layers with Cutoff Wavelength of 12 µm

3. Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates

4. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

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1. A Study of the Photoelectrochemical Etching of n-GaN in H3PO4 and KOH Electrolytes;ECS Journal of Solid State Science and Technology;2019-09-13

2. Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting;Japanese Journal of Applied Physics;2019-07-10

3. The InGaN Material System and Blue/Green Emitters;Light-Emitting Diodes;2019

4. InGaN-based photoanode with ZnO nanowires for water splitting;Nano Convergence;2016-12

5. Advances and prospects in nitrides based light-emitting-diodes;Journal of Semiconductors;2016-06

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