Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process-Reference-Cited by-同舟云学术

Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process

Published:2014-01 Issue: Volume:385 Page:1-8
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Teng Ying-Yang,Chen Jyh-Chen,Huang Bo-Siang,Chang Ching-Hsin

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

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4. Control of metal impurities in “dirty” multicrystalline silicon for solar cells;Istratov;Materials Science and Engineering B,2006

5. Thermal dynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell;Matsuo;Journal of Crystal Growth,2008

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