High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers-Reference-Cited by-同舟云学术

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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

Published:2004-12 Issue:1-4 Volume:272 Page:300-304
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kuan T.M.,Chang S.J.,Su Y.K.,Lin J.C.,Wei S.C.,Wang C.K.,Huang C.I.,Lan W.H.,Bardwell J.A.,Tang H.,Lin W.J.,Cherng Y.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. GaAs FET RF switches

2. Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements

3. Modeling and design of GaAs MESFET control devices for broad-band applications

4. AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

5. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

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1. Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure;International Journal of Nanotechnology;2022

2. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors;physica status solidi (c);2011-11-29

3. Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films;Advanced Materials Research;2011-07

4. AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures;Applied Physics Letters;2010-05-24

5. GaN MSM Photodetectors with an Unactivated Mg-Doped GaN Cap Layer and Sputtered ITO Electrodes;Journal of The Electrochemical Society;2008

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