Optimization of InAs quantum dots formation on (311)A substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
2. Low-threshold oxide-confined 1.3-μm quantum-dot laser
3. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
4. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and Optical Characteristics of InAs QDs Stacked on GaAs Substrate by Molecular Beam Epitaxy;Materials Today: Proceedings;2019
2. Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence;Physica B: Condensed Matter;2006-04
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