Temperature dependence of the optical properties on GaInNP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure
2. Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
3. 29.5%‐efficient GaInP/GaAs tandem solar cells
4. Band Anticrossing in GaInNAs Alloys
5. Gas-source molecular beam expitaxy of GaInNP/GaAs and a study of its band lineup
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1. Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy;Journal of Applied Physics;2012-09-15
2. A model for thermal annealing on forming In—N clusters in InGaNP;Science China Physics, Mechanics and Astronomy;2012-03-28
3. The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing;Science China Physics, Mechanics and Astronomy;2011-08-17
4. Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence;Journal of Applied Physics;2009-07-15
5. Model of annealing-induced short-range order effects in (GaIn)(NP) alloys;Physical Review B;2006-11-20
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