GaAs facet formation and progression during MBE overgrowth of patterned mesas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
2. Modulation of one‐dimensional electron density inn‐AlGaAs/GaAs edge quantum wire transistor
3. Self-organized growth of quantum dot-tunnel barrier systems
4. Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods
5. (111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation
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1. Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars;Journal of Applied Physics;2016-12-28
2. Control of InGaAs and InAs facets using metal modulation epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
3. Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays;Surface Science Reports;2013-11
4. The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution;Journal of Crystal Growth;2009-07
5. Stable conductance plateaus from ridge wires grown on a patterned substrate;Applied Physics Letters;2008-05-26
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