The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Optically pumped lasing of ZnO at room temperature
2. Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode
3. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature
4. Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN
5. Initial growth of GaN on sapphire(0001) using an amorphous buffer layer formed at room temperature by RF-MBE
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1. Systematic study of an Fe2O3 stacked homojunction photoelectrochemical photoelectrode;Ceramics International;2021-03
2. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100°C with three-pulsed precursors per growth cycle;Journal of Crystal Growth;2017-10
3. Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization;MRS Advances;2016-12-12
4. The roles of buffer layer thickness on the properties of the ZnO epitaxial films;Applied Surface Science;2016-12
5. Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering;MRS Proceedings;2015
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