Heavily doped silicon crystals: neckless growth and robust wafers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process
2. Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration
3. Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt
4. Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking
5. High Strength Si Wafers with Heavy B and Ge Codoping
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1. Float-zone growth of silicon crystals using large-area seeding;Journal of Crystal Growth;2019-06
2. Bulk Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017
3. Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots;Journal of Crystal Growth;2016-11
4. Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth;Physica B: Condensed Matter;2007-12
5. Bulk Crystal Growth – Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2006
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