Structural and morphological properties of N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic diimide films on passivated GaAs(100) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts
2. Quasiepitaxial growth of the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride
3. Organic-inorganic interfaces: principles of quasi-epitaxy of a molecular semiconductor on inorganic compound semiconductors
4. Growth of the Organic Molecular Semiconductor PTCDA on Se-Passivated GaAs(100): An STM Study
5. Preparation and passivation of GaAs(001) surfaces for growing organic molecules
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2. Weakly bound PTCDI and PTCDA dimers studied by using MP2 and DFT methods with dispersion correction;Physical Chemistry Chemical Physics;2013
3. The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives;Applied Physics A;2009-04
4. Optical and photovoltaic properties of thin films of N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide;Thin Solid Films;2007-07
5. Electronic and Vibrational Spectroscopies Applied to Organic/Inorganic Interfaces;Chemical Reviews;2007-04-01
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