Ultrafast carrier dynamics in InN epilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages
2. Improvement on epitaxial grown of InN by migration enhanced epitaxy
3. Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy
4. Unusual properties of the fundamental band gap of InN
5. Optical bandgap energy of wurtzite InN
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1. Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers;Journal of Applied Physics;2023-12-06
2. Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition;Applied Surface Science;2023-01
3. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED;Crystals;2022-08-08
4. Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT;AIP Advances;2020-02-01
5. Nonequilibrium Plasma Aerotaxy of InN Nanocrystals and Their Photonic Properties;The Journal of Physical Chemistry C;2019-11-25
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