Metastable group II sulphides grown by MBE: surface morphology and crystal structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Growth of cubic (zinc blende) CdSe by molecular beam epitaxy
2. Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy
3. Epitaxial growth of zinc‐blende ZnSe/MgS superlattices on (001) GaAs
4. Growth and characterization of pseudomorphic single crystal zinc blende MnS
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates;Semiconductor Science and Technology;2014-01-15
2. Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II–VI Quantum Cascade Lasers;Journal of Electronic Materials;2012-04-19
3. Metastable II–VI sulphides: Growth, characterization and stability;Journal of Crystal Growth;2011-05
4. Metastable zinc-blende MgS structure: Combined experimental and theoretical study;Physical Review B;2009-06-05
5. A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties;Journal of Crystal Growth;2009-03
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