Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Quantum Dot Lasers;Ustinov,2003
2. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
3. Low-threshold oxide-confined 1.3-μm quantum-dot laser
4. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
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1. Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength;Journal of Luminescence;2014-04
2. Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers;Semiconductors;2012-11
3. Strain accumulation in InAs/In x Ga1−x As quantum dots;Applied Physics A;2011-06-04
4. Strain accumulation in InAs/In x Ga1−x As quantum dots;Applied Physics A;2010-11-17
5. Control of Strain in GaSbAs/InAs/GaAs Quantum Dots;Journal of Physics: Conference Series;2010-09-01
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