Growth by the facile vertical Bridgman method and optoelectronic properties of one-inch PbI2 crystal

Author:

Wu Shufan,Qian Lu,Wang Qing,Gong Zheng,Pan Shangke,Pan Jianguo

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference42 articles.

1. Growth and characterization of a PbI2 single crystal used for gamma ray detectors;Zhu;Cryst. Res. Technol.,2010

2. Effect of impurities on polytypism and phase transformation of gel-grown PbI2 single crystals;Soudmand;Acta. Crystallogr. D,2002

3. Development of thick intrinsic silicon detectors for hard X-ray and gamma-ray detection;Phlips;IEEE Nuclear Science Symposium and Medical Imaging Conference,2001

4. Growth of bulk lead di-iodide crystals from the vapour phase;Eckstein;J. Cryst. Growth.,1993

5. Material properties and room-temperature nuclear detector response of wide bandgap semiconductors;Schieber;Nucl. Instrum. Meth. A.,1996

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