Author:
Xue Lianghao,Feng Gan,Gao Bing,Liu Sheng
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hubei Province
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004
2. Bulk growth of single crystal silicon carbide;Sudarshan;Microelectron. Eng.,2006
3. Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices;Zhang;IEEE. T. Power. Electr.,2019
4. N. Yun, J. Lynch, W. Sung, Demonstration and analysis of a 600V, 10A, 4H-SiC lateral single RESURF MOSFET for power ICs applications, Appl. Phys. Lett., 114 (2019) 192104.1–192104.5.
5. Nanoindentation-induced amorphization in silicon carbide;Szlufarska;Appl. Phys. Lett.,2004
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