Investigation of the avalanche ruggedness of SiC JBS diodes with floating limiting rings under single unclamped-inductive-switching stress
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
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4. Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes;Katsuno;Appl. Phys. Lett.,2011
5. Performance of a 1-kV, silicon carbide avalanche breakdown diode;Urciuoli;IEEE Trans. Power Electron.,2015
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