Extended investigation of an abrupt crystal diameter change during Czochralski silicon growth with transverse magnetic field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Growth of semiconductor silicon crystals
2. Fully three dimensional numerical analysis of industrial scale silicon Czochralski growth with a transverse magnetic field
3. Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF
4. Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field
5. Computer modeling of HMCz Si growth
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1. LBM modeling of three-dimensional mixed convection in CZ crystal growth on curvilinear coordinates system;Results in Physics;2024-06
2. Design of follow-up superconducting Cusp magnetic field and system performance analysis of Czochralski single crystal furnace;Results in Physics;2023-10
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