Protrusions reduction in 3C-SiC thin film on Si-Reference-Cited by-同舟云学术

Protrusions reduction in 3C-SiC thin film on Si

Published:2018-09 Issue: Volume:498 Page:248-257
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zimbone Massimo,Mauceri Marco,Litrico Grazia,Barbagiovanni Eric Gasparo,Bongiorno Corrado,La Via Francesco

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

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4. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer;Takeuchi;J. Cryst. Growth,1991

5. High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon hetero-junction solar cells;Miyajima;Appl. Phys. Lett.,2010

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